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IPB020N10N5 MOSFET Transistor

The IPB020N10N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB020N10N5 transistor as follows.

Circuit diagram symbol of the IPB020N10N5 transistor

IPB020N10N5 Transistor Specification

Transistor Code IPB020N10N5
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Transistor SMD Code 020N10N5
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.002Ohm
Power Dissipation (Maximum) PD 375W
Drain-Source Capacitance 1810pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 26nS
Gate-Threshold Voltage (Maximum) 3.8V
Total Gate Charge 168nC

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