IPB019N06L3G MOSFET Transistor

The IPB019N06L3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB019N06L3G transistor as follows.

IPB019N06L3G Transistor Specification

Transistor Code		IPB019N06L3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0019Ohm
Power Dissipation (Maximum)	PD	250W
Total Gate Charge		125nC

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