IPB017N10N5 MOSFET Transistor

The IPB017N10N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB017N10N5 transistor as follows.

IPB017N10N5 Transistor Specification

Transistor Code		IPB017N10N5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		017N10N5
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0017Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		1810pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		3.8V
Total Gate Charge		168nC

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