IPB017N08N5 MOSFET Transistor

The IPB017N08N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB017N08N5 transistor as follows.

IPB017N08N5 Transistor Specification

Transistor Code		IPB017N08N5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		017N08N5
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0017Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		2000pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		3.8V
Total Gate Charge		178nC

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