IPB015N04L MOSFET Transistor

The IPB015N04L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB015N04L transistor as follows.

IPB015N04L Transistor Specification

Transistor Code		IPB015N04L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		015N04L
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0015Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		3400pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2V

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