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IPA80R650CE MOSFET Transistor

The IPA80R650CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA80R650CE transistor as follows.

Circuit diagram symbol of the IPA80R650CE transistor

IPA80R650CE Transistor Specification

Transistor Code IPA80R650CE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Transistor SMD Code 8R650CE
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.65Ohm
Power Dissipation (Maximum) PD 33W
Drain-Source Capacitance 46pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 3.9V

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