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IPA80R310CE MOSFET Transistor

The IPA80R310CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA80R310CE transistor as follows.

Circuit diagram symbol of the IPA80R310CE transistor

IPA80R310CE Transistor Specification

Transistor Code IPA80R310CE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Transistor SMD Code 8R310CE
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.31Ohm
Power Dissipation (Maximum) PD 35W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 3.9V

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