IPA65R600E6 MOSFET Transistor

The IPA65R600E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA65R600E6 transistor as follows.

IPA65R600E6 Transistor Specification

Transistor Code		IPA65R600E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FP
Drain-Source Voltage (Maximum)	VDS	650V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	28W
Total Gate Charge		23nC

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