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IPA65R225C7 MOSFET Transistor

The IPA65R225C7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA65R225C7 transistor as follows.

Circuit diagram symbol of the IPA65R225C7 transistor

IPA65R225C7 Transistor Specification

Transistor Code IPA65R225C7
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Transistor SMD Code 65C7225
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.225Ohm
Power Dissipation (Maximum) PD 29W
Drain-Source Capacitance 14pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS
Gate-Threshold Voltage (Maximum) 4V

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