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IPA60R460CE MOSFET Transistor

The IPA60R460CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA60R460CE transistor as follows.

Circuit diagram symbol of the IPA60R460CE transistor

IPA60R460CE Transistor Specification

Transistor Code IPA60R460CE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Transistor SMD Code 6R460CE
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.46Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 41pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 3.5V

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