IPA50R800CE MOSFET Transistor

The IPA50R800CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA50R800CE transistor as follows.

IPA50R800CE Transistor Specification

Transistor Code		IPA50R800CE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Transistor SMD Code		5R800CE
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	26.4W
Drain-Source Capacitance		23pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.5nS
Gate-Threshold Voltage (Maximum)		3.5V

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