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IPA50R650CE MOSFET Transistor

The IPA50R650CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA50R650CE transistor as follows.

Circuit diagram symbol of the IPA50R650CE transistor

IPA50R650CE Transistor Specification

Transistor Code IPA50R650CE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Transistor SMD Code 5R650CE
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.65Ohm
Power Dissipation (Maximum) PD 27.2W
Drain-Source Capacitance 26pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 3.5V

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