IPA126N10N3G MOSFET Transistor

The IPA126N10N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA126N10N3G transistor as follows.

IPA126N10N3G Transistor Specification

Transistor Code		IPA126N10N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FP
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0126Ohm
Power Dissipation (Maximum)	PD	33W
Total Gate Charge		26nC

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