IPA083N10N5 MOSFET Transistor

The IPA083N10N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPA083N10N5 transistor as follows.

IPA083N10N5 Transistor Specification

Transistor Code		IPA083N10N5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Transistor SMD Code		083N10N5
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0083Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		337pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3.8V

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