HY8N50T MOSFET Transistor

The HY8N50T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY8N50T transistor as follows.

HY8N50T Transistor Specification

Transistor Code		HY8N50T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		8N50T
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		145pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28.6nS
Gate-Threshold Voltage (Maximum)		4V

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