HY80N075T MOSFET Transistor

The HY80N075T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY80N075T transistor as follows.

HY80N075T Transistor Specification

Transistor Code		HY80N075T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		80N075T
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18.2nS
Gate-Threshold Voltage (Maximum)		4V

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