HY75N10T MOSFET Transistor

The HY75N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY75N10T transistor as follows.

HY75N10T Transistor Specification

Transistor Code		HY75N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		75N10T
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	136W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16.8nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		156nC

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