HY5N50T MOSFET Transistor

The HY5N50T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY5N50T transistor as follows.

HY5N50T Transistor Specification

Transistor Code		HY5N50T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		5N50T
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	71W
Drain-Source Capacitance		76pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36.2nS
Gate-Threshold Voltage (Maximum)		4V

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