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HY2N70T MOSFET Transistor

The HY2N70T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY2N70T transistor as follows.

Circuit diagram symbol of the HY2N70T transistor

HY2N70T Transistor Specification

Transistor Code HY2N70T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Transistor SMD Code 2N70T
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 6.5Ohm
Power Dissipation (Maximum) PD 44.5W
Drain-Source Capacitance 32pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 26.8nS
Gate-Threshold Voltage (Maximum) 4V

UXPython is not the creator or an official representative of the HY2N70T MOSFET transistor. You can download the official HY2N70T MOSFET transistor datasheet to get more infromation about this transistor.

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