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HY2N60D MOSFET Transistor

The HY2N60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY2N60D transistor as follows.

Circuit diagram symbol of the HY2N60D transistor

HY2N60D Transistor Specification

Transistor Code HY2N60D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Transistor SMD Code 2N60D
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.6Ohm
Power Dissipation (Maximum) PD 43.8W
Drain-Source Capacitance 42pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12.6nS
Gate-Threshold Voltage (Maximum) 4V

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