The HY1906P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the HY1906P transistor as follows.
| Transistor Code | HY1906P | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TO-220FB | |
| Drain-Source Voltage (Maximum) | VDS | 60V |
| Gate-Source Voltage (Maximum) | VGS | 25V |
| Drain Current (Maximum) | ID | 120A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.0075Ohm |
| Power Dissipation (Maximum) | PD | 188W |
| Drain-Source Capacitance | 876pF | |
| Operating Junction Temperature (Maximum) | 175°C | |
| Rise Time | 11nS | |
| Gate-Threshold Voltage (Maximum) | 4V | |
UXPython is not the creator or an official representative of the HY1906P MOSFET transistor. You can download the official HY1906P MOSFET transistor datasheet to get more infromation about this transistor.
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