HY1906B MOSFET Transistor

The HY1906B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY1906B transistor as follows.

HY1906B Transistor Specification

Transistor Code		HY1906B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	188W
Drain-Source Capacitance		876pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		4V

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