HY18N50W MOSFET Transistor

The HY18N50W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY18N50W transistor as follows.

HY18N50W Transistor Specification

Transistor Code		HY18N50W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Transistor SMD Code		18N50W
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.32Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36.8nS
Gate-Threshold Voltage (Maximum)		4V

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