free stats

HY1607P MOSFET Transistor

The HY1607P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY1607P transistor as follows.

Circuit diagram symbol of the HY1607P transistor

HY1607P Transistor Specification

Transistor Code HY1607P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 68V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 70A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 160W
Drain-Source Capacitance 190pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 4V

UXPython is not the creator or an official representative of the HY1607P MOSFET transistor. You can download the official HY1607P MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

STP55NF06FP STP55NF06FP MOSFET Transistor FQP5N40 FQP5N40 MOSFET Transistor AOT20C60 AOT20C60 MOSFET Transistor TK18E10K3 TK18E10K3 MOSFET Transistor AOT462L AOT462L MOSFET Transistor FCP20N60FS FCP20N60FS MOSFET Transistor AOT7N60 AOT7N60 MOSFET Transistor AP78T10GP-HF AP78T10GP-HF MOSFET Transistor WFP10N65 WFP10N65 MOSFET Transistor APQ57SN10B APQ57SN10B MOSFET Transistor RU40280R RU40280R MOSFET Transistor AOT404 AOT404 MOSFET Transistor RU60120R RU60120R MOSFET Transistor IPP055N03L IPP055N03L MOSFET Transistor APQ0CSN60A APQ0CSN60A MOSFET Transistor AOT12N65 AOT12N65 MOSFET Transistor TMP10N65 TMP10N65 MOSFET Transistor MSK7D5N60T MSK7D5N60T MOSFET Transistor AFN12N65T220T AFN12N65T220T MOSFET Transistor IXTP4N90A IXTP4N90A MOSFET Transistor