HY150N075T MOSFET Transistor

The HY150N075T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY150N075T transistor as follows.

HY150N075T Transistor Specification

Transistor Code		HY150N075T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		150N075T
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		820pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		42.8nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		186nC

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