HX50N06-TA3 MOSFET Transistor

The HX50N06-TA3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HX50N06-TA3 transistor as follows.

HX50N06-TA3 Transistor Specification

Transistor Code		HX50N06-TA3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		430pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		3.8V

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