The HX4N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the HX4N60 transistor as follows.
| Transistor Code | HX4N60 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TO-220_TO-220F_TO-25 | |
| Drain-Source Voltage (Maximum) | VDS | 600V |
| Gate-Source Voltage (Maximum) | VGS | 30V |
| Drain Current (Maximum) | ID | 4.4A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 2.5Ohm |
| Power Dissipation (Maximum) | PD | 33W |
| Drain-Source Capacitance | 55pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 42nS | |
| Gate-Threshold Voltage (Maximum) | 4V | |
UXPython is not the creator or an official representative of the HX4N60 MOSFET transistor. You can download the official HX4N60 MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
UF730 MOSFET Transistor
UF9640 MOSFET Transistor
UF9Z24 MOSFET Transistor
HX2N60 MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.