HUFA76645S3ST MOSFET Transistor

The HUFA76645S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA76645S3ST transistor as follows.

HUFA76645S3ST Transistor Specification

Transistor Code		HUFA76645S3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Transistor SMD Code		76645S
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	310W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		310nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		127nC

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