HUFA76639S3ST MOSFET Transistor

The HUFA76639S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA76639S3ST transistor as follows.

HUFA76639S3ST Transistor Specification

Transistor Code		HUFA76639S3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Transistor SMD Code		76639S
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	51A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		520pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		207nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		71nC

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