HUFA75652G3 MOSFET Transistor

The HUFA75652G3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA75652G3 transistor as follows.

HUFA75652G3 Transistor Specification

Transistor Code		HUFA75652G3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		75652G
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	515W
Drain-Source Capacitance		2345pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		195nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		393nC

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