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HUFA75639S3S MOSFET Transistor

The HUFA75639S3S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA75639S3S transistor as follows.

Circuit diagram symbol of the HUFA75639S3S transistor

HUFA75639S3S Transistor Specification

Transistor Code HUFA75639S3S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263_D2PAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 56A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.025Ohm
Power Dissipation (Maximum) PD 200W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 57nC

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