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HUFA75623S3ST MOSFET Transistor

The HUFA75623S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA75623S3ST transistor as follows.

Circuit diagram symbol of the HUFA75623S3ST transistor

HUFA75623S3ST Transistor Specification

Transistor Code HUFA75623S3ST
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263AB
Transistor SMD Code 75623S
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 22A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.064Ohm
Power Dissipation (Maximum) PD 85W
Drain-Source Capacitance 215pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 42nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 43nC

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