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HUFA75617D3S MOSFET Transistor

The HUFA75617D3S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA75617D3S transistor as follows.

Circuit diagram symbol of the HUFA75617D3S transistor

HUFA75617D3S Transistor Specification

Transistor Code HUFA75617D3S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252AA
Transistor SMD Code 75617D
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 64W
Drain-Source Capacitance 125pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 31nC

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