HUFA75339S3ST MOSFET Transistor

The HUFA75339S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA75339S3ST transistor as follows.

HUFA75339S3ST Transistor Specification

Transistor Code		HUFA75339S3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Transistor SMD Code		75339S
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		110nC

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