HUF76639P3 MOSFET Transistor

The HUF76639P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF76639P3 transistor as follows.

HUF76639P3 Transistor Specification

Transistor Code		HUF76639P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		3V

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