HUF76633S3ST MOSFET Transistor

The HUF76633S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF76633S3ST transistor as follows.

HUF76633S3ST Transistor Specification

Transistor Code		HUF76633S3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Transistor SMD Code		76633S
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	39A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	145W
Drain-Source Capacitance		415pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		56nC

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