HUF76609D3ST MOSFET Transistor

The HUF76609D3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF76609D3ST transistor as follows.

HUF76609D3ST Transistor Specification

Transistor Code		HUF76609D3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Transistor SMD Code		76609D
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	49W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		41nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		13nC

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