HUF76609D3S MOSFET Transistor

The HUF76609D3S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF76609D3S transistor as follows.

HUF76609D3S Transistor Specification

Transistor Code		HUF76609D3S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.165Ohm
Power Dissipation (Maximum)	PD	49W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		13nC

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