HUF76139P3 MOSFET Transistor

The HUF76139P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF76139P3 transistor as follows.

HUF76139P3 Transistor Specification

Transistor Code		HUF76139P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	165W
Operating Junction Temperature (Maximum)		150°C

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