HUF76013P3 MOSFET Transistor

The HUF76013P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF76013P3 transistor as follows.

HUF76013P3 Transistor Specification

Transistor Code		HUF76013P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		76013P
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		444pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		93nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		14.4nC

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