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HUF75852G3 MOSFET Transistor

The HUF75852G3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75852G3 transistor as follows.

Circuit diagram symbol of the HUF75852G3 transistor

HUF75852G3 Transistor Specification

Transistor Code HUF75852G3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247_TO3P_TO3PF
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 500W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 400nC

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