HUF75829D3 MOSFET Transistor

The HUF75829D3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75829D3 transistor as follows.

HUF75829D3 Transistor Specification

Transistor Code		HUF75829D3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251AA
Transistor SMD Code		75829D
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		58nC

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