HUF75645S3ST MOSFET Transistor

The HUF75645S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75645S3ST transistor as follows.

HUF75645S3ST Transistor Specification

Transistor Code		HUF75645S3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Transistor SMD Code		75645S
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	310W
Drain-Source Capacitance		810pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		117nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		198nC

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