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HUF75637S3ST MOSFET Transistor

The HUF75637S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75637S3ST transistor as follows.

Circuit diagram symbol of the HUF75637S3ST transistor

HUF75637S3ST Transistor Specification

Transistor Code HUF75637S3ST
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263AB
Transistor SMD Code 75637S
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 44A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 155W
Drain-Source Capacitance 460pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 75nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 90nC

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