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HUF75631SK8T MOSFET Transistor

The HUF75631SK8T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75631SK8T transistor as follows.

Circuit diagram symbol of the HUF75631SK8T transistor

HUF75631SK8T Transistor Specification

Transistor Code HUF75631SK8T
Transistor Type MOSFET
Control Channel Type N-Channel
Package MS-012AA
Transistor SMD Code 75631SK8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.039Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 330pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 23nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 66nC

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