HUF75623S3ST MOSFET Transistor

The HUF75623S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75623S3ST transistor as follows.

HUF75623S3ST Transistor Specification

Transistor Code		HUF75623S3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Transistor SMD Code		75623S
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.064Ohm
Power Dissipation (Maximum)	PD	85W
Drain-Source Capacitance		215pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		42nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		43nC

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