HUF75545S3ST MOSFET Transistor

The HUF75545S3ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75545S3ST transistor as follows.

HUF75545S3ST Transistor Specification

Transistor Code		HUF75545S3ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263AB
Transistor SMD Code		75545S
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	270W
Drain-Source Capacitance		1100pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		125nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		195nC

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