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HUF75531SK8T MOSFET Transistor

The HUF75531SK8T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75531SK8T transistor as follows.

Circuit diagram symbol of the HUF75531SK8T transistor

HUF75531SK8T Transistor Specification

Transistor Code HUF75531SK8T
Transistor Type MOSFET
Control Channel Type N-Channel
Package MS-012AA
Transistor SMD Code 75531SK8
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 385pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 68nC

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