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HUF75339S3 MOSFET Transistor

The HUF75339S3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75339S3 transistor as follows.

Circuit diagram symbol of the HUF75339S3 transistor

HUF75339S3 Transistor Specification

Transistor Code HUF75339S3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO262AA
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 124W
Drain-Source Capacitance 2000pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 110nC

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