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HUF75329G3 MOSFET Transistor

The HUF75329G3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUF75329G3 transistor as follows.

Circuit diagram symbol of the HUF75329G3 transistor

HUF75329G3 Transistor Specification

Transistor Code HUF75329G3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 49A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.024Ohm
Power Dissipation (Maximum) PD 94W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 60nC

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